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Saturation behavior of the optical gain in GaAs injection lasers

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1 Author(s)
Lang, R. ; Nippon Electric Company, Ltd., Kawasaki, Japan

A recent analysis of the saturation behavior of the optical gain in semiconductor lasers has predicted a strong spectral hole-burning effect. With an improved treatment of the intraband relaxation in the analysis the effect disappears entirely.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:10 ,  Issue: 10 )

Date of Publication:

Oct 1974

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