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A conductor-permalloy loop bubble domain memory

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2 Author(s)
Shirakura, T. ; Electrotechnical Laboratory, Chiyoda-ku, Tokyo, Japan ; Yoshihiro, S.

A bubble-domain memory cell and a storage loop configuration are proposed. The basic operations of writing and shifting information, which include retention and ejection of bubble domains, have been tested. Experimental results for quasi-static operation using YFeO3have shown the anticipated operating margins. This configuration has advantages of both field and conductor access, i.e., selective operation of the storage loops, bidirectional shifting, etc.

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Magnetics, IEEE Transactions on  (Volume:9 ,  Issue: 3 )