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A conductor-permalloy loop bubble domain memory

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2 Author(s)
Shirakura, T. ; Electrotechnical Laboratory, Chiyoda-ku, Tokyo, Japan ; Yoshihiro, S.

A bubble-domain memory cell and a storage loop configuration are proposed. The basic operations of writing and shifting information, which include retention and ejection of bubble domains, have been tested. Experimental results for quasi-static operation using YFeO3have shown the anticipated operating margins. This configuration has advantages of both field and conductor access, i.e., selective operation of the storage loops, bidirectional shifting, etc.

Published in:

Magnetics, IEEE Transactions on  (Volume:9 ,  Issue: 3 )

Date of Publication:

Sep 1973

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