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High-density thin-magnetic-film memory devices using double-layer storage films with NDRO properties were designed and tested. Use of the two double-layer films-one on the bottom and the other on the top of the bit-sense line-produced a structure that allows flux closure in such a way as to make possible a high-density film array. The devices tested were experimental arrays with densities of 4400 bits per cm2. Test results agreed well with those predicted from the theoretical model. Static measurements, as well as dynamic worst-case pulse tests for films and storage cells, were conducted, and the resulting signals and operating currents were determined.