By Topic

General upper bound on single-event upset rate

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
D. Chlouber ; McDonnell Douglas Space Syst. Co., Houston, TX, USA ; P. O'Neill ; J. Pollock

A technique for predicting an upper bound on the rate at which single-event upsets due to ionizing radiation occur in semiconducting memory cells is described. The upper bound on the upset rate, which depends on the high-energy particle environment in Earth orbit and accelerator cross section data, is given by the product of an upper bound linear energy transfer spectrum I and the mean cross section of the memory cell. Plots of the spectrum I are given for low inclination and polar orbits. An alternative expression for the exact upset rate is also presented. Both methods rely only on experimentally obtained cross section data and are valid for sensitive bit regions having arbitrary shape

Published in:

IEEE Transactions on Nuclear Science  (Volume:37 ,  Issue: 2 )