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A new thin film memory has been developed. The memory plane is comprised of an NDRO storage array with fully integrated structure and the peripheral integrated circuits on the same substrate. The distinctive feature of this memory is the multilayered structure of a metal substrate, digit lines, and word lines covered by thin Permalloy keeper stripes with thin polyimide resin as the intermediate insulative layers. In order to realize a superior building block unit adaptable to any memory structure requirement, the memory plane is mounted on a printed circuit board whose physical dimensions are identical with those of the logic IC board.