By Topic

The fluxgate mechanism, part I: The gating curves of parallel and orthogonal fluxgates

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
F. Primdahl ; Division of Geomagnetism, Dominion Observatory, Energy, Mines, and Resources, Ottawa, Ont., Canada.

A review of various types of fluxgate sensors is given and they are divided into two major groups, parallel-and orthogonal-gated fluxgates. A theory for parallel and for orthogonal gating is presented and the gating characteristics for the two cases are calculated from measured B-H curves. The theory is verified by a close fit to the experimentally derived curves and finally a general expression for the output voltage from the two types of fluxgates is presented.

Published in:

IEEE Transactions on Magnetics  (Volume:6 ,  Issue: 2 )