By Topic

Optimization of the planar hall effect in ferromagnetic thin films for device design

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Battarel, C. ; University of Toulouse, Toulouse, France ; Galinier, M.

The planar Hall effect, although directly related to the magnetoresistance effect, differs in its potential uses by the disposition of the sensing electrodes allowing an internal balance of the excitation voltage drop. An experimental study of ferromagnetic thin film conditions of evaporation, film thickness, composition and shape of the electrodes has been undertaken. Anisotropic Ni-Fe films with various additions of Pd, V, Co, Mo, showed a maximum planar Hall effect for the composition 86-percent Ni, 14-percent Fe. The optimization of the geometrical parameters of the electrodes and the magnetic film elements is described, allowing one to design for maximum output voltage or maximum output current in a short circuited loop. Two schemes are presented for implementation of small NDRO memories.

Published in:

Magnetics, IEEE Transactions on  (Volume:5 ,  Issue: 1 )