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Very high-speed cross-sectional model for a 147-kbit thin magnetic film memory in the NDRO mode

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1 Author(s)
Jutzi, Wilhelm ; IBM Zurich Research Laboratory, Rüschlikon, Switzerland

A cross-sectional model is designed to prove the feasibility of a 147-kbit thin magnetic film memory in the eddy current braked nondestructive readout (NDRO) mode. With the full word, digit, and sense line lengths, the model is operated with drive currents smaller than 400 mA. The write and the nondestructive read word pulses are different in amplitude and duration, but fit the requirements of a high-speed selection matrix. Including the matrix, a nondestructive read cycle time of 20 ns is achieved, yielding sense signals in the order of 1 mV. Word and digit noise compensation schemes are investigated at large duty factors. Bipolar digit pulses are used.

Published in:

Magnetics, IEEE Transactions on  (Volume:3 ,  Issue: 4 )

Date of Publication:

Dec 1967

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