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Hall-effect devices

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1 Author(s)
Epstein, Max ; Northwestern University, Evanston, Ill

The Hall effect and magnetoresistance in solids is discussed in terms of the Lorentz force on current carriers. The advances in thin-film high-mobility semiconductors are related to the increased utilization and developments of Hall-effect devices. The design of such devices depends, in most cases, on the associated magnetic structures. Several examples of applications of Hall-effect and magnetoresistive devices to measurements, communications, and controls are presented. Limitations in performance due to magnetic structures, current noise, and various other galvanomagnetic and thermomagnetic effects are discussed to indicate the range of capabilities of the devices.

Published in:

Magnetics, IEEE Transactions on  (Volume:3 ,  Issue: 3 )