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A simple model for writing in orthogonal-conductor magnetic memory elements

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1 Author(s)
Baldwin, John A. ; Autonetics,a Division of North American Aviation, Anaheim, Calif.

A model is presented which describes the flux-switching processes in a class of batch-fabricated magnetic memory structures. These structures consist of crossed word and bit conductors embedded in a sheet of ferromagnetic material. The model predicts, with fair accuracy, bit-current threshold vs. word current as a function of device geometry. It also makes semiquantitative predictions of flux switched as a function of the write currents. The model is applied to the case of thin ribbon conductors, and the flux efficiency is computed for different device geometries.

Published in:

Magnetics, IEEE Transactions on  (Volume:2 ,  Issue: 4 )

Date of Publication:

Dec 1966

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