By Topic

Perpendicular magnetization in Co-CoO film prepared by reactive RF sputtering

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Ohkoshi, M. ; Hiroshima University, Higashi-Hiroshima, Japan ; Tamari, K. ; Honda, S. ; Kusuda, T.

The perpendicular magnetization state is realized in Co-CoO film prepared by reactive RF sputtering in argon-oxygen mixture. With increasing the oxygen partial pressure, saturation magnetization of the deposited film decreases monotonically due to the formation of CoO. The film is composed of fine particles of hcp Co and fcc CoO. The perpendicular magnetic anisotropy energy and the coercivity reach to 3 × 106erg/cm3and 2 kOe, respectively. Above a critical partial pressure of oxygen, the deposited film has no spontaneous magnetization with a Co3O4single phase. The observed columnar structure in the Co-CoO film becomes fine with increasing the oxygen partial pressure. The exchange anisotropy is found in the Co-CoO film. The perpendicular magnetic anisotropy in the film is likely to be originated from an anisotropic assembly of ferromagnetic Co particles and antiferromagnetic CoO particles.

Published in:

Magnetics, IEEE Transactions on  (Volume:20 ,  Issue: 5 )