By Topic

Phenomenological model for the BIAX

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Nistler, P. ; UNIVAC, St. Paul, MN, USA ; Korkowski, V.J.

This paper describes a model developed for the operation of the BIAX as applicable to an NDRO memory system. The role of a field transverse to the storage direction during writing is described. Factors contributing to the output and to the back voltage are pointed out to explain the ratio observed between these two. These individual contributions arise from rotation of the magnetization vector and changes in the dispersion angle during interrogation. A mechanical analogy is presented for the asymmetry of the NDRO observed under high-speed operation.

Published in:

Magnetics, IEEE Transactions on  (Volume:1 ,  Issue: 4 )