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Effect of ion-implantation on magnetic switching fields of single-domain, magneto-optic elements

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4 Author(s)
MacNeal, B.E. ; Litton Data Systems, Woodley Ave., Van Nuys, CA ; Pulliam, G. ; de Castro, J.J. ; Warren, D.

The effect of multiple B+ implantation on 109 μm square single-domain magneto-optic elements formed by chemical etching of Bi-doped Tm:YIG epitaxial films ( \sim 7 \mu m) is investigated by measuring the external switching field Hswsw required to reverse the magnetization \bar{M_{s}} as a function of implant profile, dosage, and the angle θ between the field and the film normal. For low doses (< 0.15% strain), switching is determined by coherent rotation in the implanted layer; Hswdecreases linearly ( \lambda _{111} = -5.5 \times 10^{-6,} \theta = 0\deg ) from Hk. 4πMs= 3995 Oe to 566 Oe and Hsw(θ) is the classic switching curve for a uniaxial anisotropy. For higher doses, Hswremains constant or increases slightly, and Hsw (\theta) \propto (\cos\theta)^{-1} , indicating that switching is limited by wall motion, and the force proportional to \nabla H_{k} at the implant/bulk interface. With annealing Hswincreases for low dose as Hkincreases, and decreases for higher doses as \nabla H_{k} decreases. Measurements width three stain profiles intricate that more gradual strain transitions produce lower Hswdue to decreased \nabla H_{k} .

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Magnetics, IEEE Transactions on  (Volume:19 ,  Issue: 5 )