By Topic

An AlGaAs/InxGa1-xAs/AlGaAs (0⩽x⩽0.5) pseudomorphic HEMT on GaAs substrate using an Inx/2Ga1-x/2As buffer layer

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
K. Maezawa ; NTT LSI Labs., Kanagawa, Japan ; T. Mizutani

A pseudomorphic HEMT employing a thick Inx/2Ga1-x/2As buffer layer on a GaAs substrate substrate is proposed in order to use an InxGa1-xAs channel with a large InAs mole fraction. This buffer layer acts as a substrate with intermediate lattice constant. Transmission electron microscopy observations revealed that good-quality crystal can be obtained using this buffer layer. An extremely large two-dimensional electron gas density of 4.6×1012 cm-2 was obtained at x=0.4 with a high electron mobility of 15500 cm2/V-s at 77 K. HEMTs were fabricated on these wafers. The transconductance increases with increasing InAs mole fraction and shows a peak at x=0.4. The transconductance for 1.7-μm gate length was 500 mS/mm at room temperature, which was about 2.5 times larger than that of x=0

Published in:

IEEE Transactions on Electron Devices  (Volume:37 ,  Issue: 6 )