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On the calculation of specific contact resistivity on ⟨100⟩ Si

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2 Author(s)
Ng, K.K. ; AT&T Bell Labs., Murray Hill, NJ, USA ; Ruichen Liu

In order to design submicrometer Si MOSFETs properly, the specific contact resistivity ρc has to be controlled. The ρ c is known to be a function of both the barrier height and the Si surface doping concentration. An existing theory is used to generate ρc, emphasizing details in the practical regimes, with a careful choice of proper parameters such as the tunneling effective mass, which is a function of both temperature and doping concentration

Published in:

Electron Devices, IEEE Transactions on  (Volume:37 ,  Issue: 6 )

Date of Publication:

Jun 1990

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