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The material characteristics, processing technology, implantation conditions and circuit design are described for a bubble memory chip using ion implantation in order to define the propagation level. Nucleation, transfer between loops and stretching for detection use hairpin conductors. A passive merge is designed in the major loop by taking advantage of the magnetocrystalline anisotropy of the garnet film. At 35 oe of drive field, a minimum of 10 oe operating margins is obtained for all these different functions. The thin Fe-Ni detector has a 1 mV/mA sensitivity with a low noise level.