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It was revealed that the YGaIG single crystal grown by the FZ method shows an etch pit pattern caused by crystal defects different from that obtained by flux method. To reduce such crystal defects, various experiments as parameters of crystallizing conditions have been studied. These experimental results revealed that crystal defects of etch pit density of less thatn 102pcs.cm-2is obtained at the core region of the crystal by decreasing the crystal defects inherent to FZ method and by expanding the core region. As for microwave characteristics a narrow ΔH and a few mode change resonator has been developed.