Cart (Loading....) | Create Account
Close category search window
 

Effects of annealing on propagation in ion-implanted contiguous-disk bubble devices

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Kie Ahn ; IBM Thomas J. Watson Research Center, Yorktown Heights, NY ; Keefe, G.

Bubble propagation margins are found to be affected by heat treatment in ion-implanted contiguous-disk devices fabricated on liquid-phase epitaxial (LPE) grown double-layer garnet films which support 1-μm bubbles. When an optical reflector is deposited directly on the driving layer interfacial diffusion takes place, and this raises the coercivity of the implanted layer, which in turn causes a severe degradation of propagation margins. In samples fabricated with optical reflectors isolated from the driving layer, the adverse effects of annealing on propagation margins are stronger in close-packed minor loops due to interaction of long-range charged walls as compared with isolated loops and isolated disks, and they cease to propagate bubbles after annealing in the temperature range of 350-400°C, whereas the loss of margins in the isolated loops and disks are typically less than 30 percent after 600-650°C annealing treatments. Stress gradients caused by the discontinuity in the overlay patterns contribute significantly to the increase of threshold drive field after anealing. The rapid degradation of propagation margins found after annealing in the temperature range of 350-400°C in all samples is caused by reordering of the damaged lattice.

Published in:

Magnetics, IEEE Transactions on  (Volume:16 ,  Issue: 4 )

Date of Publication:

Jul 1980

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.