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10 GHz bandwidth 20 dB gain low-noise direct-coupled amplifier ICs using Au/WSiN GaAs MESFET

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4 Author(s)
Imai, Y. ; NTT LSI Labs., Kanagawa, Japan ; Tokumitsu, M. ; Onodera, K. ; Asai, K.

A low-noise direct-coupled amplifier IC with a bandwidth of 10 GHz was developed using a 0.4 mu m gate-length Au/WSiN GaAs MESFET technology. The amplifier achieved a high gain of 20 dB and a minimum noise figure of 3.2 dB with a power consumption of 365 mW.

Published in:

Electronics Letters  (Volume:26 ,  Issue: 11 )