Referenced Items are not available for this document.
A low-noise direct-coupled amplifier IC with a bandwidth of 10 GHz was developed using a 0.4 mu m gate-length Au/WSiN GaAs MESFET technology. The amplifier achieved a high gain of 20 dB and a minimum noise figure of 3.2 dB with a power consumption of 365 mW.
Published in:
Electronics Letters
(Volume:26
,
Issue:
11
)
Date of Publication: 24 May 1990
- Page(s):
- 699 - 700
- ISSN :
- 0013-5194
- INSPEC Accession Number:
- 3670605
- Digital Object Identifier :
- 10.1049/el:19900456
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- 24 May 1990
- Sponsored by :
- Institution of Engineering and Technology
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