Skip to Main Content
A relationship between bonding strength and bonding area has been found which suggests that the increase in bonding strength is caused by the bonding area increase in the oxidised silicon wafer direct bonding (SDB) process. The bonding area shows a saturation property with bonding time. Diffusion of various species existing in bonding interface region plays a key role in SDB process over different temperature. Viscous flow of the oxides completes bonding at T>1050 degrees C. A rapid thermal bonding (RTB) at 1200 degrees C for 2 min following 800 degrees C for 2 hr annealing realises complete bonding with little doping profile change in the system.
Date of Publication: 24 May 1990