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Effects of heat treatment on the surface carrier density in p-type CdTe

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3 Author(s)
D. Kim ; Dept. of Mater. Sci. & Eng., Stanford Univ., CA, USA ; A. L. Fahrenbruch ; R. H. Bube

The authors investigate the mechanism by which the carrier density of p-CdTe:P in solar cells decreases due to heat treatment. By successive etching of a heat-treated sample, a carrier-density profile resulting from carrier loss near the surface was found to be a real effect. Experiments with varying cadmium and phosphorous vapor pressures are presented which indicate that compensation occurs through the formation of P/sub Cd/ antisite donors. Observations of the reverse reaction by annealing a sample of p-CdTe:P with CdTe powder after first annealing in vacuum shows that it does occur but at a much slower rate than the formation of the P/sub Cd/ defects.<>

Published in:

Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE

Date of Conference:

26-30 Sept. 1988