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Block oriented bubble domain memory organization

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3 Author(s)
P. George ; Rockwell International, Anaheim, CA, USA ; T. Oeffinger ; O. Bohning

A block oriented bubble domain memory organization is proposed which provides a block access time improvement over existing major/minor loop designs and which exhibits built-in redundancy. Wafer level integration is utilized to reduce the module lead count.

Published in:

IEEE Transactions on Magnetics  (Volume:12 ,  Issue: 4 )