Scheduled System Maintenance:
On Monday, April 27th, IEEE Xplore will undergo scheduled maintenance from 1:00 PM - 3:00 PM ET (17:00 - 19:00 UTC). No interruption in service is anticipated.
By Topic

Rotational and alternating hysteresis losses in 4% silicon-iron single crystal with the {110} surface

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Narita, K. ; Kyushu University, Fukuoka, Japan ; Yamaguchi, T.

The rotational and the alternating hysteresis losses have been measured on small discs of 4% silicon-iron with the {110} surface, and the results have been explained on the basis of the changes in domain-structure observed under various conditions. It has been clarified that the magnetization under the rotating field or the alternating field in the <110> direction proceeds by forming finely divided 90° domain-structure and that the greater part of the hysteresis loss under such conditions can be attributed to the energy dissipation due to the annihilation of domain walls. The thickness dependence of the hysteresis losses has been explained from the changes in domain-wall spacing.

Published in:

Magnetics, IEEE Transactions on  (Volume:11 ,  Issue: 6 )