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Determination of doses for ion implantation in garnet films

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3 Author(s)
Jouve, H. ; Laboratoire d''Electronique et de Technologie de l''Informatique, Grenoble Cedex, France ; Gailliard, J.P. ; Piaguet, J.

The effects of doses in implanted magnetic garnets are investigated by means of magnetic modifications of the implanted layer. Experiments performed on materials with various magnetostriction coefficients and with different growth induced anisotropies show that the stresses are proportional to the ion dose. At high dosage levels an elastic-plastic transformation occurs followed by a progressive destruction of the magnetic order. These results make possible the calculation of the dose necessary for a garnet, given its magnetostriction coefficient and its anisotropy energy.

Published in:

Magnetics, IEEE Transactions on  (Volume:11 ,  Issue: 5 )

Date of Publication:

Sep 1975

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