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Thin film magnetoresistors in memory, storage, and related applications

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3 Author(s)
D. Thompson ; IBM Thomas J. Watson Research Center, Yorktown Heights, N.Y. ; L. Romankiw ; A. Mayadas

This paper is a review of ferromagnetic metal film magnetoresistors for applications such as read transducers in advanced computer memory and storage technology (mainly bubble domain memories and magnetic recording systems). Uses of semiconductor Hall effect sensors in this environment are also reviewed, and wherever possible a comparison of the suitability of the two classes of sensors for a particular application is made. The paper includes a phenomenological treatment of galvanomagnetic effects, a brief discussion of materials, design considerations and applications, and a short section on device fabrication techniques.

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IEEE Transactions on Magnetics  (Volume:11 ,  Issue: 4 )