By Topic

Thin film magnetoresistors in memory, storage, and related applications

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Thompson, David A. ; IBM Thomas J. Watson Research Center, Yorktown Heights, N.Y. ; Romankiw, L.T. ; Mayadas, A.

This paper is a review of ferromagnetic metal film magnetoresistors for applications such as read transducers in advanced computer memory and storage technology (mainly bubble domain memories and magnetic recording systems). Uses of semiconductor Hall effect sensors in this environment are also reviewed, and wherever possible a comparison of the suitability of the two classes of sensors for a particular application is made. The paper includes a phenomenological treatment of galvanomagnetic effects, a brief discussion of materials, design considerations and applications, and a short section on device fabrication techniques.

Published in:

Magnetics, IEEE Transactions on  (Volume:11 ,  Issue: 4 )