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Wall placement in a cross-tie memory element

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2 Author(s)
D. Lo ; Sperry Univac, St. Paul, MN, USA ; M. Paul

Methods of placing parallel domain walls in magnetic films for a cross-tie memory are described, and a new technique is proposed which involves magnetic annealing at an elevated temperature after the film has been fabricated.

Published in:

IEEE Transactions on Magnetics  (Volume:10 ,  Issue: 4 )