By Topic

Domain configuration under rotational flux and applied stress conditions in silicon-iron

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Phillips, R. ; City of Bath Technical College, Somerset, England ; Overshott, K.

Measurements of power loss have been made on individual grains in polycrystalline specimens of commercial 3% grain-oriented silicon-iron under longitudinal and transverse ac magnetization and rotational flux conditions. The domain configurations have also been observed using a stroboscopic Kerr magnetic-optic apparatus. The effect of longitudinal stress and dc bias fields on the domain patterns and power loss under these ac magnetization conditions has also been investigated. It can be concluded that the highest power loss occurs under pure rotational flux conditions and that the application of longitudinal compressive stress increases the power loss, but to a lesser extent when a transverse ac flux is present. The application of a longitudinal dc field increases the power loss for all ac magnetizing conditions, and it has been observed that a longitudinal tensile stress has the opposite effect on the domain configuration to the application of a transverse dc field.

Published in:

Magnetics, IEEE Transactions on  (Volume:10 ,  Issue: 2 )