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15-GHz modulation performance of integrated DFB laser diode EA modulator with identical multiple-quantum-well double-stack active layer

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3 Author(s)
Stegmueller, B. ; Corporate Res., Infineon Technol. AG, Munich, Germany ; Baur, E. ; Kicherer, M.

Monolithically integrated InGaAsP 1.55-/spl mu/m ridge waveguide distributed feedback laser diodes with an electroabsorption modulator using an identical active multiquantum-well (MQW) layer structure with two different QW types exhibit low-threshold currents <18 mA. The 3-dBe cutoff frequency of 200-/spl mu/m-long modulators exceeds 15 GHz. 10-Gb/s transmission experiments with a voltage swing of 1.0 V/sub pp/ demonstrate the potential of this novel integration scheme.

Published in:

Photonics Technology Letters, IEEE  (Volume:14 ,  Issue: 12 )

Date of Publication:

Dec. 2002

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