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This paper deals with a new physically based model for the circuit simulation, which is implemented in Saber MAST, to calculate the static and dynamic behavior of integrated gate-commutated thyristor (IGCT) devices correctly. The model is verified by comparing simulation with experimental results of a 4.5-kV/3-kA IGCT in hard-switch snubberless operation. Furthermore, simulation results of two series-connected IGCT switches are analyzed, in particular, concerning the problem of nonsymmetrically distributed blocking voltages between the switches if snubbers are omitted due to inevitably existent differences concerning the exact device properties and the gate drives, respectively. An idea for dimensioning the snubber capacity is given.