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Determination of minority carrier mobility in heavily doped Si using a new model based on percolation theory

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5 Author(s)
Jain, S.C. ; Interuniv. Microelectron. Center, Leuven, Belgium ; Ghannam, M.Y. ; Mertens, R.P. ; Nijs, J.F.
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The effect of band tails on the mobility of heavily doped silicon is calculated using a model based on percolation theory. The proposed model allows the determination of the ratio of free minority carrier to total minority carrier density. Only holes in n-type silicon are treated. It is noted that the result can be used in modeling and designing high efficiency solar cells.

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Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE

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