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Electrical and photoelectric properties of a-Si:H deposited by direct photo-CVD (for solar cell applications)

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3 Author(s)
Matsunami, Hiroyuki ; Dept. of Electr. Eng., Kyoto Univ., Japan ; Fuyuki, T. ; Yoshimoto, Masahiro

a-Si:H films were deposited by a direct photo-CVD (chemical vapor deposition) method with a XE resonance lamp (147 nm). The properties of these films were somewhat different from those obtained by conventional glow discharge (GD) methods. The low dark conductivity of the photo-CVD films (10-11 S/cm) indicates that the films are more intrinsic than GD films. The ratio of photo and dark conductivities reached 106 with good stability against light illumination. The films deposited by the photo-CVD method are promising materials for solar cells.

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Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE

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