Referenced Items are not available for this document.
Diffraction and other structural measurements on n-type SiC thin films prepared in a TCDDC (two consecutive decomposition and deposition chamber) system indicate the presence of Si microcrystals (without evidence for SiC crystallites). Weakly absorbing, highly conductive layers ( sigma >or=10-1 ( Omega -cm)-1) contain up to 20 at.% C and 25 at.% O. The optoelectronic properties of these films can be explained in terms of a sufficient volume fraction (above the percolation threshold) of Si microcrystals surrounded by an a-Si:C,O,H matrix.
Published in:
Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
Date of Conference: 1988
- Page(s):
- 320 - 323 vol.1
- Meeting Date :
- 26 Sep 1988-30 Sep 1988
- INSPEC Accession Number:
- 3505159
- Conference Location :
- Las Vegas, NV, USA
- Digital Object Identifier :
- 10.1109/PVSC.1988.105713
- Product Type:
- Conference Publications
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