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The very-high-frequency glow discharge (VHF-GD) is a high-rate deposition method for amorphous silicon based on the use of plasma excitation frequencies in the range 30-150 MHz. Thereby the high-energy tail of the electron energy density function is enhanced, increasing the deposition rate R, without a corresponding increase in electric field and ion bombardment. An extensive set of optoelectronic properties ( sigma dark, Ea, sigma ph, CPM, PDS, TOF, SSPG, steady-state Hecht plot) is presented for samples prepared by VHF-GD for the above frequency range and R approximately=12-15 AA/s. Emphasized are hole transport properties. With values of ( mu D tau t)h by TOF (time of flight) around 3*10-10 but up to approximately=5*10-9 cm2/V, VHF-GD is judged to be adequate for solar-cell applications.