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The authors report material and solar cell properties for a-Si:H intrinsic layers deposited at rates of up to 20 A-s-1 using RF plasma-enhanced chemical vapor deposition in disilane. The optoelectronic properties of a-Si:H thin films and the efficiencies of solar cells fabricated with these intrinsic layers show a weak dependence on the deposition rate of the intrinsic a-Si:H films. Solar cells with efficiencies of 9 and 8% with the intrinsic layers deposited at approximately 10 and approximately 20 A-s-1, respectively, were obtained. Data on the stability of disilane solar cells are also presented.