By Topic

Preparation and properties of high deposition rate a-Si:H films and solar cells using disilane

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Bhat, P.K. ; Glasstech Solar Inc., Wheatridge, CO, USA ; Marshall, C. ; Sandwisch, J. ; Chatham, H.
more authors

The authors report material and solar cell properties for a-Si:H intrinsic layers deposited at rates of up to 20 A-s-1 using RF plasma-enhanced chemical vapor deposition in disilane. The optoelectronic properties of a-Si:H thin films and the efficiencies of solar cells fabricated with these intrinsic layers show a weak dependence on the deposition rate of the intrinsic a-Si:H films. Solar cells with efficiencies of 9 and 8% with the intrinsic layers deposited at approximately 10 and approximately 20 A-s-1, respectively, were obtained. Data on the stability of disilane solar cells are also presented.

Published in:

Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE

Date of Conference:

1988