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Multicollector transistors fed by carrier injection are used. A simplified (five masks) standard bipolar process is used resulting in a packing density of 400 gates/mm/SUP 2/ with interconnection widths and spacings of 5 μm. The power-delay time product is 0.4 pJ per gate. An additional advantage is a very low supply voltage (less than 1 V). This, combined with the possibility of choosing the current level within several decades enables use in very low-power applications. With a normal seven-mask technology, analog circuitry has been combined with integrated injection logic (I/SUP 2/L).