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A GaAs 4 K×4-b static random access memory (SRAM) with 11-ns access time and 1-W power dissipation is described. The device is fabricated using 1.0-μm WSi/SUB x/ selfaligned gate metal semiconductor FET (MESFET) and double-level interconnection technology. Optimization of fan-out and adoption of an address precoder circuit enable both fast access time and low power dissipation. The SRAM operates with a single 1.0-V supply.