By Topic

CMOS ROM arrays programmable by laser beam scanning

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)

A CMOS PROM array with a novel programming method has been developed. Memory cells consist of two n-channel transistors and a p-n junction diode which is built by a p-moat in an n-well. Programming is accomplished by scanning green laser beams in diodes to decrease minority-carrier lifetime, without disturbing passivation after the fabrication is complete. This innovation has application where post-fabrication personalization of circuits is desirable. Also, the memory contents are not easily discovered through visual inspection or reverse engineering.

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:22 ,  Issue: 4 )