Close category search window
 

A graphical model for two-region saturation in bipolar transistors and its implementation in the modeling program SPICE

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)

Two-region saturation at high injection levels and at low frequencies may be conveniently approximated using a graphical model which introduces the concept of quasi-saturation resistance R/SUB QS/. It is shown how this graphical model may be implemented in the modeling program SPICE with the aid of a distributed equivalent circuit.

Published in:
Solid-State Circuits, IEEE Journal of  (Volume:22 ,  Issue: 2 )

Date of Publication: Apr 1987

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.