Referenced Items are not available for this document.
A method to predict the small-signal linear gain and level of harmonic distortion in analog MOS circuits is presented. This method, based on a generalized nonlinear transfer function approach, lends itself to implementation in the AC small-signal analysis routine of the circuit simulation program SPICE. A low-frequency nonlinear distortion model based on the CSIM simulator MOSFET model is applied to three simple MOSFET circuits. Results presented emphasize the need to consider small-signal quantities in the development of MOSFET models and in the determination of device parameters. The method can be easily extended to include capacitive effects and a prediction of intermodulation distortion.
Published in:
Solid-State Circuits, IEEE Journal of
(Volume:22
,
Issue:
1
)
Date of Publication: Feb 1987
- Page(s):
- 106 - 109
- ISSN :
- 0018-9200
- Digital Object Identifier :
- 10.1109/JSSC.1987.1052679
- Date of Current Version :
- 06 January 2003
- Issue Date :
- Feb 1987
- Sponsored by :
- IEEE Solid-State Circuits Society
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