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A V/SUB be/(T) model with application to bandgap reference design

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2 Author(s)

The authors discuss a new model for the V/SUB be/(T) characteristics of a bipolar transistor. A curvature-compensated bandgap voltage reference scheme based on this model is described. A CMOS circuit configuration to implement the compensation scheme is proposed. It may be suitable for such uses as high-resolution monolithic data acquisition.

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:20 ,  Issue: 6 )