Referenced Items are not available for this document.
Using simple square-law models for both the MOSFET current-voltage characteristics and the relationship between the threshold voltage and the source-to-substrate voltage, simple expressions are presented for predicting the performance of the basic MOSFET circuits used in analog MOS technology. Using these expressions, the low-frequency gain and the second and third harmonic distortion performance of the enhancement-load inverters, enhancement-load source follower, depletion-load inverter, and depletion-load source follower can be easily predicted by hand calculations. The results obtained by using these expressions are compared with previously published measurements and calculations.
Published in:
Solid-State Circuits, IEEE Journal of
(Volume:20
,
Issue:
4
)
Date of Publication: Aug 1985
- Page(s):
- 860 - 864
- ISSN :
- 0018-9200
- Digital Object Identifier :
- 10.1109/JSSC.1985.1052400
- Date of Current Version :
- 06 January 2003
- Issue Date :
- Aug 1985
- Sponsored by :
- IEEE Solid-State Circuits Society
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