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Fast Programmable 256K Read Only Memory with On-Chip Test Circuits

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7 Author(s)

A 32K X 8 bits EPROM which satisfies all requirements for a high-density EPROM, has been developed. The fast programming time is achieved by introducing a DSA structure into the memory cell. The low power consumption and fast access time are realized by utilizing n-well CMOS peripheral circuits. Various test circuits are implemented to alleviate lengthy screening time. Typical programming time, access time, and power dissipation are 3μbyte, 100 ns, and 5 mA, respectively.

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:20 ,  Issue: 1 )

Date of Publication:

Feb 1985

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