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Analysis of Kink Characteristics in Silicon-on-Insulator MOSFET's Using Two-Carrier Modeling

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3 Author(s)

An exact SOI device simulator applicable to prediction of the transistor characteristics in high-current region is developed. In the simulator, the basic two-dimensional Poisson's and current continuity equations are numerically solved under steady-state condition. To obtain a stable and rapid convergence in the numerical scheme, a newly developed alternative step solving method is implemented. Using this simulator, the drain current kink effect, a typical phenomenon for substrate-floating devices, is exactly simulated for the first time. The physical mechanism of this phenomenon is also clarified. The simulated results indicate that kink effects are suppressed by using Iow-lifetime SOI substrates.

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:20 ,  Issue: 1 )

Date of Publication:

Feb. 1985

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