By Topic

Time-Dependent Dielectric Breakdown of Thin Thermally Grown SiO2 Films

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)

To evaluate the reliability of thin thermally grown oxide films, we investigated both step stress breakdown and time-dependent dielectric breakdown (TDDB) which exhibited two distinguished slopes in Weibull plots. It is demonstrated that the intermediate breakdown mode (B mode) in the breakdown histogram corresponded to the steep slope in the short time range of the TDDB plot. The steep slope is observed in the shorter time range with stress field and temperature. The electric field acceleration factor decreases with decreasing tbe oxide thickness. The TDDB data give us minimum voltage in the step stress breakdown histogram necessary to guarantee the device operation for 10 years. Comparison between the breakdown histogram and the minimum voltage indicates that the B mode defect should be decreased. Major origins of the B mode defect are oxygen microprecipitates and metallic contamination in the Si substrates. We found that both high temperature preoxidation annealing and phosphorus diffusion into the back side of wafers greatly increase time to failure of thin thermally grown SiO2 films because of decreasing both the number of oxygen microprecipitates and metallic contamination level.

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:20 ,  Issue: 1 )