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A single-chip high-voltage shallow-junction BORSHT-LSI

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4 Author(s)

High-voltage and low-voltage BORSHT functions have been successfully incorporated into a single chip for the purpose of realizing a low-cost small-size subscriber-line interface circuit in a digital local switching system. The developed BORSHT-LSI is fabricated using a newly designed 350-V p-n-p-n device with shallow junctions 2 /spl mu/ in depth and a dielectrically isolated complementary bipolar technique. The chip size is 4.25/spl times/6.21 mm, 33% smaller than the already developed RT-LSI and BSH-LSI combined. The worst-case power dissipation is about 600 mW. The LSI can be mounted onto a 40 pin package.

Published in:

IEEE Journal of Solid-State Circuits  (Volume:19 ,  Issue: 6 )