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A parametric short-channel MOS transistor model for subthreshold and strong inversion current

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2 Author(s)

The authors present a parametric model which covers the subthreshold and strong inversion regions with a continuous transition between these regions. The effects included in the model are mobility reduction, carrier velocity saturation, body effect, source-drain resistance, drain-induced barrier lowering, and channel-length modulation. The model simulates accurately the current characteristics as well as the transconductance and output conductance characteristics which are important for analog circuit simulation.

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:19 ,  Issue: 1 )