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The authors present a parametric model which covers the subthreshold and strong inversion regions with a continuous transition between these regions. The effects included in the model are mobility reduction, carrier velocity saturation, body effect, source-drain resistance, drain-induced barrier lowering, and channel-length modulation. The model simulates accurately the current characteristics as well as the transconductance and output conductance characteristics which are important for analog circuit simulation.
Date of Publication: Feb. 1984