Skip to Main Content
The isolation of I/SUP 2/L structures in a conventional bipolar LSI technology is provided by a shallow or a deep n/SUP +/ collar. If part of this collar is replaced with an injector, an interdigitated I/SUP 2/L structure results. The structure has less delay at intermediate current levels compared to the conventional I/SUP 2/L layout. The reduction in delay is significant if the replaced collar is a shallow n/SUP +/. This improved performance is obtained at the expense of packing density. This correspondence presents the structure and analyzes its performance.