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A CMOS magnetic field sensor

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2 Author(s)

The authors present a novel, fully integrated magnetic field sensor made in the standard, polysilicon-gate CMOS technology. The circuit shows a sensitivity of 1.2 V/T with 10 V supply voltage and 100 /spl mu/A current consumption. The circuit consists of a pair of split-drain MOS transistors in a CMOS-differential amplifier-like configuration.

Published in:

IEEE Journal of Solid-State Circuits  (Volume:18 ,  Issue: 4 )