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Presents first-order large-signal MOSFET models and derives corresponding small-signal models. The parameters of the small-signal models are related to operating-point bias and to the parameters of the IC process used to fabricate the device. The impact upon small-signal performance of many second-order effects present in small-geometry MOSFETs is explored. A representative analog circuit, fabricated with a 1 μm feature-size NMOS technology, is analyzed using the small-signal models derived. Results of approximate analysis, without the use of computer aids, are compared with detailed computer simulation results.